| PART |
Description |
Maker |
| M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q |
512K x 16Bit x 2Banks
|
Elite Semiconductor Memory Technology Inc.
|
| M52S16161A-10BG M52S16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S16161A0707 M12S16161A-6TG M12S16161A-6BG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| T431616D-7SG T431616D-7C T431616D-7CG T431616E-7C |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM 100万16内存12k × 16Bit的X 2Banks同步DRAM
|
TM Technology, Inc.
Electronic Theatre Controls, Inc.
|
| M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
| M52D32162A-10BG M52D32162A-10TG M52D32162A-7.5BG M |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| EM411M1612VTA EM404M1614VTA EM404M1612VTA EM402M16 |
16Mb ( 2Banks ) Synchronous DRAM 16兆（2Banks）同步DRAM
|
Electronic Theatre Controls, Inc.
|
| K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/ |
512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
